Abstract
Si single quantum dots (QDs) and Si/Ge double QDs doped TiO2 films were successfully fabricated via layer-by-layer ion beam sputtering assisted by annealing treatment, and their morphology and optical absorption performance were analyzed in this paper. TEM images show that Si QDs and Si/Ge double QDs prepared in the TiO2 matrix are in a uniform size distribution and high density, especially after annealed at 500 °C. XPS results indicate that Si in the TiO2 films mainly exists in the form of elemental Si and SiO2, and Ge is in elemental form. From the optical absorption spectra, the optical response of the TiO2 films is shifted from ultraviolet to visible and near infrared region when they are doped by the QDs, and the Si/Ge double QDs co-doped TiO2 films show better optical response compared with the Si QDs doped TiO2 films, suggesting a hybrid enhanced effect of double QDs.
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