Abstract
Gallium nitride crystals in nano-scale have been fabricated by dc arc plasma method using gallium and N2+NH3 as starting materials. Transmission electron microscope, selected area diffraction and x-ray diffraction investigation of the as-grown GaN crystals show that the well faceted crystals are single crystalline GaN in wurtzite structure having lattice constants ao = 3.18 Å and co = 5.18 Å.
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