Abstract
We prepared Gd 3Ga 2Al 3O 12 (GGAG) co-doped with trivalent cerium and boron ions and investigated its luminescence properties as a function of the B 3+ concentration. The luminescence intensity was enhanced markedly by adding B 3+ as a co-dopant. The non-boron-doped GGAG:Ce 3+ converted less than 10% of the absorbed blue light into luminescence. As the B 3+ concentration increased, Q increased and reached a maximum of Q = 21% at 1.5 moles in GGAG:Ce 3+. White light closer to daylight with good color-rendering index properties was generated with the proper combination of yellow emission from GGAG:Ce 3+,B 3+ and blue emission from a GaN chip.
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