Abstract
Boron Nitride (BN) films were synthesized onto silicone wafer by depositing B metal vapour under simultaneous irradiation of N ions. Here, film thickness, ion beam energy and transport ratio (B/N) were selected as a preparation parameter and they were controlled in the range of 0.2-1μm, 0.2~2keV and 1~5, respectively. The BN films prepared were characterized using several analytical techniques and their internal stresses were estimated using Stoney's equation. From Fourier transform infrared spectroscopy, it was found that use of low energy N ions is effective for the formation of cubic BN (cBN) phase using ion mixing and vapour deposition (IVD) technique. At this condition, high compressive stress is measured and strong correlations were found among crystal structure, internal stress and Knoop hardness of BN films.
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