Abstract
β-SiC nanowires were synthesized by using an improved simple and low-cost thermal evaporation process at 1500°C, without argon protect and catalyst assistant. The process simplifies the chemical vapor deposition method, which makes it easier to operate and industrialize. X-ray diffraction, Field emission scanning electron microscopy, high-resolution transmission electron microscopy and energy dispersive spectrum were employed to characterize the as-synthesized products. The β-SiC nanowires are about 50–100nm in diameter, up to several micrometers long and usually grow along [111] direction with a thin oxide shell. A vapor–solid growth mechanism of the nanowires is proposed.
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