Abstract

Porous germanium (PG) is prepared by a novel bipolar electrochemical etching (BEE) technique; scanning electron microscopy (SEM) clearly reveals formation of a porous layer up to a few microns thick that is Ge–Hx terminated as indicated by FTIR spectroscopy; the hydride terminated PG material is quite resistant to oxidation, even under thermal conditions, but can be induced to undergo hydrogermylation reactions with alkenes and alkynes.

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