Preparation and enhanced photoelectric properties of ZnO/ZnSe nanorods arrays composites

Abstract

ZnO nanorod arrays were prepared using the sol-gel method and hydrothermal method, and ZnO/ZnSe nanorod arrays composites were fabricated using an improved CIRR (Chemical Infiltration and Reaction at Room Temperature) method. The samples have been characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), etc. The results show that the dark current of the ZnO nanorod arrays photoelectric device is 1.79 × 10−5 A, the photocurrent of which is 3.33 × 10−3 A, and the photocurrent response of which is 186. The current of the ZnO nanorod arrays photoelectric device does not drop sharply, and the photoelectric response and recovery process are slow, which shows the appearance of photoconductive relaxation phenomenon. The dark current of the ZnO/ZnSe nanorod arrays composite photoelectric device was 3.61 × 10−7 A, the photocurrent of which was 4.39 × 10−4 A, and the photocurrent response of which was 1216. This may be because the photogenerated electrons and holes can be quickly separated at the heterojunction interface, which provides a strong basis for optimizing the design of optoelectronic devices.