Abstract
ABSTRACTWe have grown La2−xSrxCuO4 single-crystalline films on atetra-axis oriented Zn doped La2CuO4 single crystals by IR-LPE technique. The films show thickness dependence of Tc,onset, but films of thickness below 80μm doesn't show zero resistance down to 4.2K. The I-V characteristics showed reduced voltage jump than usual and small hysteresis. This phenomenon resembles with the characteristics of resistively and capacitively shunted intrinsic Josephson junctions (RCSJ)
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