Abstract
Nano-diamond films with a mean grain size of 20 nm have been successfully prepared on silicon substrate by microwave plasma chemical vapor deposition (MPCVD) technique using gas mixture of nitrogen–methane–hydrogen. The structure and surface morphology of the films are examined using X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Field emission results show that good crystal quality nano-diamond film has a threshold electric field of 3 V/μm, much lower than the typical threshold electric field of diamond films grown using conventional gas mixture of hydrogen–methane, indicating that nano-diamond film is a good candidate for electron emitter material.
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