Abstract
Carbonaceous thin films were prepared from ethylene, argon and nitrogen trifluoride (NF3) by plasma assisted chemical vapor deposition (PCVD). The carbon thin films were characterized by scanning electron microscope (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) and then their electrochemical properties were studied by cyclic voltammetry and charge and discharge.measurements. From SEM image carbon thin films were flat and pin-hole free. XPS spectra indicate that nitrogen and fluorine atoms are not contained in carbon thin films. Crystallinity of the films are affected by the NF3 flow rate from Raman spectra. The difference of the NF3 flow rates also affected the results of cyclic voltammetry and charge and discharge measurements. Correlation of the NF3 flow rate and the electrochemical properties of carbon thin films was discussed.
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