Abstract
In this study, SiB6 and SiB6-10wt%C prepared by hot pressing. The influence of temperature on the electrical conductivity of SiB6 and SiB6-10wt%C sintered body was investigated. The sample was sintered at 1973K for 3.6ks in vacuum under a pressure of 25MPa. The relative density of sintered body at 1373K was approximately 99%. The high temperature electrical conductivity measured using a D.C. four-terminal method.
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