Abstract
La0.8Sr0.2Ga0.8Mg0.2O3 (LSGM) and La0.8Sr0.2Ga0.8Mg0.115Co0.085O3 (LSGMC) thin films were deposited on single crystalline (001) Al2O3 substrates using a pulsed laser deposition technique. The LSGM and LSGMC thin films exhibited only a single phase, which was verified through x-ray diffraction (XRD) experiments. Scanning electron microscopy (SEM) showed that the grain size of the LSGM film was smaller than that of the LSGMC films. Below 800 K, the ionic conductivity of both the thin films was higher than that of bulk sample. Furthermore, the LSGM thin film showed higher ionic conductivity than the LSGMC thin film at temperatures above 600 K.
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