Abstract
Celsian ceramics based on hexagonal BaAl2Si2O8 have been prepared through synthesis at 1450°C followed by firing at 1500°C. The unit-cell parameters of BaAl2Si2O8 and principal bond distances in its structure have been determined by the Rietveld method. Using differential thermal analysis and temperature-dependent dielectric measurements, we have determined the temperature of the α (hexagonal) to β (hexagonal) phase transition in our samples: 280–320°C.
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