Abstract
High reflection films for 800nm picoseconds laser system requires broad bandwidth, which is usually about ±50nm, or even to ±70nm, and a high laser damage threshold is needed at the same time. Multilayer dielectrics using three materials Nb 2 O 5 /SiO 2 -HfO 2 /SiO 2 were fabricated by electron beam evaporation. Benefit from its high refractive index of Nb 2 O 5 and the high damage threshold of HfO 2 films, the multilayer dielectrics were prepared successfully, which have more than 99.5% reflectance within bandwidth larger than 140nm around the center wavelength of 800 nm. The laser damage characteristics of the films at 150ps, 1Hz were studied, and the damage mechanism was analyzed.
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