Preparation and crystallographic characterizations of highly oriented Pb(Zr 0.52Ti 0.48)O 3 films and MgO buffer layers on (100)GaAs and (100)Si by pulsed laser ablation

Abstract

Lead-zirconate-titanate (Pb(Zr 0.52Ti 0.48)O 3: PZT) thin films were prepared on both (100)GaAs and (100)Si substrates with MgO buffer layers. Both of the PZT films and MgO buffer layers were deposited by pulsed laser ablation (PLA) using an ArF excimer laser. [100]-oriented perovskite PZT films with [100]-oriented MgO buffer layers were obtained on both substrates. The microstructures of MgO buffer layers and PZT films were evaluated using a scanning electron microscope (SEM). This preparation technique offers promise of integrating ferroelectric and semiconductor devices.