Abstract
We deal with the formation of thin aluminum oxynitride (AlON) layers after adsorption of nitric oxide (or coadsorption of oxygen and ammonia) on NiAl(001) at 75 K and subsequent annealing at 1200 K. The adsorption of NO and formation of the AlON films are investigated by means of high-resolution electron energy loss spectroscopy (HREELS), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES). The AlON film shows a distinct (2×1) LEED pattern and the HREEL spectrum exhibits five loss peaks. An oxygen to nitrogen atomic ratio of ≂2 has been estimated from the AES analysis. The energy gap is determined to be Eg=6.6±0.2 eV. The structure of θ-AlON is derived from that of θ-Al2O3.
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