Abstract
SrBi2(Ta1-xNbx)2O9 (SBTN) thin films were first prepared on Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) with high compositional reproducibility. Bi(CH3)3, a mixture of Sr[Ta(O·C2H5)6]2 and Sr[Nb(O·C2H5)6]2, and O2 gas were used as sources. The Nb/(Ta+Nb) ratio in the film was almost the same as that of the source materials. The film, deposited at 500°C following heat treatment at 800°C for 30 min in O2 atmosphere, consisted of an almost single phase of SBTN. The remanent polarization and the coercive field of the 330 nm-thick film were 8.5 µC/cm2 and 91 kV/cm, respectively. This film showed negligible fatigue after 5×1010 polarization switching cycles.
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