Abstract
Epitaxial indium oxide (In2O3) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500°C to 700°C. The films deposited at each temperature display a cube-on-cube orientation relation with respect to the substrate. The In2O3 film deposited at 600°C exhibits the best crystalline quality. A clear epitaxial relationship of In2O3 (110)|MgO (110) with In2O3 [001]|MgO [001] has been observed from the interface area between the film and the substrate. The average transmittance of the prepared films in the visible range is over 95%. The band gap of the obtained In2O3 films is about 3.55–3.70eV.
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