Abstract
The preparation of nominally undoped semi-insulating (s.i.) InP by high-temperature annealing under a controlled phosphorus atmosphere provides an effective means to improve InP substrate quality. As reproducible results are restricted to the use of high-purity starting material which cannot be produced with satisfactory yields, the process was applied to InP predoped with a low Fe concentration ([ Fe] ≈ 4 × 10 15 cm −3) . Since the net donors are only partly compensated, this starting material shows normal semiconducting properties. Wafers (2 in) of this material with a low Fe content were converted to the s.i. state by annealing under a P pressure of 1 atm. The lateral uniformity was analysed by mapping the resistivity distribution and room-temperature photoluminescence. The results show that annealed s.i. 2 in wafers provide a lateral uniformity that could be achieved up to now in as-grown s.i. InP:Fe only by considerably higher Fe doping.
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