Abstract

Sb2S3 has a unique one-dimensional structure-composed (Sb4S6) n ribbons leads to strong anisotropic carrier transport characteristic: carrier transport along the (Sb4S6) n ribbon is more efficient than other ribbons. Therefore, it's crucial to control the direction of grain growth along the (hk1) orientation. In this work, the close space sublimation method was utilized to fabricate Sb2S3 thin films with a systematical regulation of substrate temperature. The results demonstrate that optimized Sb2S3 thin film presented preferred orientation at the direction of (hk1). The champion device based on Au and Ni electrodes achieved a power conversion efficiency (PCE) of 3.06% and 1.69%, respectively.

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