Abstract
A polymeric precursor method was employed in order to obtain Sb/SnO 2 thin films with well-controlled stoichiometry. The preparative process was studied by TGA–DTA of the precursor solutions. The EDX results show good agreement between the concentration in the precursor solutions and the Sb/Sn ratio in the films. XRD patterns present only the SnO 2 cassiterite-type structure, without the presence of an Sb oxide, even at higher Sb concentrations. The increase in the amount of Sb leads to a decrease in SnO 2 crystallinity. The film surface was analyzed by SEM, showing a cracked-mud type structure with the number of cracks depending on the calcination temperature and the Sb concentration.
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