Abstract
In this paper, intermediate-sized porous silicon (PS) sensing material was prepared via galvanostatic electrochemical anodization technique in a Teflon double-tank cell configuration. Then, tungsten oxide (WO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) thin films were deposited onto the PS surface by using DC reactive magnetron sputtering method. The morphology of PS and WO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /PS were observed by field emission scanning electron microscope (FESEM), respectively. Subsequently, the NO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -sensing performances of PS and WO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /PS sensors were studied at room temperature (RT, 25°C) up to 100°C. The results indicated both sensors had the same optimal operating temperature of RT. Moreover, it is found that pure PS showed a typical n-type semiconductor behavior. However, after depositing the WO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films, the WO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /PS behaved as a p-type semiconductor.
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