Preparation and characterization of Mo- and Sb: Mo-doped SnO2sol-gel-derived films for counter-electrode applications in electrochromic devices

Abstract

Mo-doped and Mo:Sb-doped SnO2 were made via the inorganic sol-gel route from the corresponding metal chloride precursors and the films were deposited by dip-coating technique. Films with a thickness of 100–170 nm were made by single dipping and the corresponding charge capacities were in the range 6–11 mC cm–2. The films retained their high optical transparency in the reduced and oxidized state and were promising counter-electrodes in electrochromic devices with transmissive modulation. This was demonstrated by using the films as a counter-electrode in an electrochromic device employing an electrochromic phosphotungstic acid/titanium oxide xerogel film and 0.001 mol dm–3 HClO4 aqueous electrolyte.