Abstract
It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabricating GST thin films on different substrates, we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope (TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions (PDF) can be achieved on single dots of L-a GST via selected area electron diffraction (SAED). This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation.
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