Abstract
In doped SnO2 thin films were prepared on quartz substrates by sol-gel dipcoating technique.X-ray diffraction results show that In doped SnO2 films a re of rutile structure.Ultraviolet-visible absorption results show that In_do ped SnO2 films have an optical band gap of about 3.8eV. Hall effect measur ement results show that the hole concentration and the mobility are dependent on both the processing temperature and the In/Sn atomic ratio. It is found that 5.25℃ is the optimum processing temperature to get the highest hole concentration . For an In/Sn atomic ratio between 0.05 and 0.20, hole concentration is almo st proportional to the In/Sn ratio.
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