Abstract
Highly c-axis-oriented bismuth litanale (Bi 4Ti 3O 12) thin films were prepared on (100)-oriented silicon wafers by rf planar magnetron sputtering using a target of Bi 2TiO 5 ceramic at a low substrate temperature of 600 °C. The films with a c-axis orientation up to 99%. were obtained under high deposition rate approximately 1.1 μm h 1. Dielectric constant of these films were dependence of film thickness. This behavior was explained assuming a low-dielectric-constant interface layer. Using this assumption, the dielectric constant of Bi 4Ti 3O 12 film was estimated to be approximately 140. This value is similar to that along the c-axis in a bulk form. A D E hysteresis characteristic has been observed at room temperature. The remanent polarisation and the coercive field are 0.8 μC cm 2 and 20 kV cm 1. respectively. From analysis of refractive index, interface layer was confirmed an oxidixed silicon, which was formed before and or during film deposition.
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