Abstract
Highly (222)-oriented Bi1.5MgNb1.5O7 thin films have successfully been prepared on SiO2/HR-Si substrates by sol-gel method with rapid thermal annealing (RTA). The films were characterized using X-ray diffraction, high-resolution transmission electron microscope and atomic force microscope. The results revealed that the thus-derived films possessed a cubic pyrochlore structure with regular and smooth surface, and exhibited superior dielectric constant of about 170. The growth of (222)-oriented BMN thin film can be explained as a self-assembly process, and the mechanism of self-assembly process was elaborated. The formation of the large dielectric constant of the film was mainly assigned to the highly (222) orientation and large in-plane tensile strain.
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