Abstract
YFeO3/TiO2 heterojunction semiconductors were prepared by the milling–annealing method. Effects of structure and surface phase by annealing temperature and TiO2 weight content were investigated. The physical and photophysical properties of heterojunction semiconductors were characterized by x-ray diffraction (XRD), UV-visible diffraction (UV-vis/DRS), and x-ray photoelectron spectroscopy (XPS), N2 adsorption. YFeO3 is presented as p-type semiconductor and disperses on the surface of n-type TiO2 to constitute a heterojunction composite. Results show that the presence of p–n junction not only has visible light harvesting but potential force for hole–electron pair separation. A preliminary investigation of photodegradation effect on Orange II showed that YFeO3/TiO2 heterojunction semiconductors exhibited better photocatalytic properties than the single phase of YFeO3 or TiO2. The ideal heterojunction semiconductor composition was ω (TiO2) = 0.9 sample annealed at 600 °C. The mechanism of the electric-field-driven electron–hole separation initiated by the chemically bonded p–n heterojunction and enhanced photocatalytic activity were discussed.
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