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Abstract
Thin films of amorphous GeO x (1.4 ≤ x ≤ 2) were obtained by RF cathodic sputtering. The study of local order by EXAFS and IR spectroscopy showed that germanium atoms and tetrahedral units GeO 4 and Ge(O 4−yGe y) were present in these materials. The refractive index and the dielectric characteristics of these films are given for the phases which are high in oxygen.
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