Preparation and characterization of diamond-silicon carbide-silicon composites by gaseous silicon vacuum infiltration process

Abstract

Diamond-SiC-Si composites have been prepared using gaseous silicon vacuum infiltration. The evolution of the phases and microstructures of the composites have been analyzed using X-ray diffraction technique and scanning electron microscopy. It has been found that the diamond-SiC-Si composite is composed of β-SiC, diamond, and residual Si. The diamond particles were distributed homogeneously in the dense matrix of the composites. Besides, the effects of particle size and content of diamond on the properties of diamond-SiC-Si composites have been analyzed. The thermal conductivity of the composites increases with particle size and content of diamond. When the particle size and content of diamond are 300 μm and 80 wt %, respectively, the thermal conductivity of the composites approaches the value of 280 W·m−1·K−1.