Abstract
CuInS 2 (CIS) thin films were deposited on ITO glass substrate by a two-step process using a simple and low-cost photochemical deposition technique. In the first step InS thin films were deposited from aqueous solution of In 2(SO 4) 3 and Na 2S 2O 3 and in the second step Cu x S films were deposited on the InS films from CuSO 4 and Na 2S 2O 3. The as-deposited films were annealed at 300 °C for 30 min. Annealed samples were characterized using Raman spectroscopy, Auger electron spectroscopy, scanning electron micrograph and optical transmission study, etc. It was observed that ternary layers were formed by interdiffusion of Cu and In during the annealing and that composition of the annealed films was determined by the deposition time of the binary layers. By optimizing the condition, nearly stoichiometric CIS was obtained.
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