Preparation and characterization of copper thin film obtained by metal plasma immersion ion implantation and deposition

Abstract

Copper thin film was obtained by metal plasma ion immersion implantation and deposition (MePIIID). The film structure was characterized by grazing incidence X-ray diffraction whereas its thickness and surface topography were evaluated by field emission scanning electron microscopy and atomic force microscopy, respectively. Rutherford backscattering spectroscopy and X-ray photoelectron spectroscopy were used to evaluate the film chemical states. Electrochemical quartz crystal microbalance (EQCM) analysis coupled to potentiodynamic polarization was employed to investigate the dissolution behavior of the MePIIID deposited layer. The copper film presented a crystalline character and its surface chemical state was mainly comprised of Cu2O. EQCM measurements provided good basis for estimating the thickness reduction and anodic dissolution rate of the as-deposited layer, proving to be a valuable tool for developing and evaluating copper-based MePIIID films for electronic applications.