Abstract
A simple process for preparing CuGaSe2 (CGS) absorber layers was developed in this study. The solgel-derived Cu-Ga-O precursor paste with variable Ga3+/Cu2+ ratios was coated on glass substrates using a doctor-blade technique. The precursor films were selenided with a selenium vapor at the temperature ranging from 250 to 550°C. The GIXRD patterns showed that single-phase CuGaSe2 through the whole films was obtained at a Ga3+/Cu2+ molar ratio of 1.5 on selenization at 450°C. The Raman measurements also indicated that the grown CuGaSe2 thin films exhibited the chalcopyrite structure. The SEM images of the films reveal that with an increase in Ga/Cu ratio in the films, the amount of Cu2Se particles on the surface of the film was reduced. The resistivity of the films was increased with the increase in Ga content in the films. The formation mechanism of CuGaSe2 thin films was proposed based on the XRD and Raman measurements of the films. The binary copper selenides are formed first, and then these phases lead to the formation of CuGaSe2.
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