Abstract
Cu2ZnGeSe4 (CZGSe), a member of Cu2–II–IV–VI4 family, is a promising material for solar cell absorber layer in thin film heterojunction solar cells like Cu2ZnSnS4 and Cu2ZnSnSe4 which have been explored in recent years as alternate to CuInGaSe2 solar cells. The effect of substrate temperature (523K–723K) on the growth of CZGSe films is investigated by studying their structural, morphological and optical properties. Raman spectroscopy studies have been done to identify the phases in addition to X-ray diffraction studies. CZGSe films deposited at different substrate temperatures and annealed at 723K in selenium atmosphere are Cu-rich and Ge-poor and contained secondary phases Cu(2−x)Se and ZnSe. CZGSe films obtained by reducing the starting Cu mass by 10% were found to be single phase with stannite structure, the lattice parameters being a=0.563nm, c=1.101nm. The direct optical band gap of CZGSe films is found to be 1.63eV which is close to ideal band gap of 1.50eV for the highest photovoltaic conversion efficiency. The films are found to be p-type.
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