Abstract
Thin film sample of Nd0.8Na0.2MnO3 was prepared on Si substrate by using the RF Sputtering technique and a well characterized bulk target material prepared by sol-gel technique. The single phase target material with Pbnm space group was found to exhibit charge ordered transition at 180K followed by a weak ferromagnetic transition at around 100K. The thin film was found to be in single phase form and its band gap determined from transmission spectra was found to be 3.81eV. The temperature variation of magnetization shows a broad peak at around 250K depicting the charge ordered transition and a weak low temperature ferromagnetic transition was observed at around 75K. The electrical resistivity of the above film shows an insulating behavior with a peak in the vicinity of charge order transition.
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