Abstract
Hydrogenated amorphous silicon nitride films were deposited on silicon wafers by plasma‐enhanced chemical vapor deposition and in situ doped with boron or phosphorus. Film properties, including both wet and dry etching rate, refractive index, dielectric constant, breakdown strength, dc resistivity, and pinhole density vs. doping percentage were systematically investigated and compared with the undoped films. It has been found that the films with doping concentrations around 2–3% exhibit the best film quality, which drastically deteriorate when the doping concentrations are beyond 6%.
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