Abstract
A successive ionic layer adsorption and reaction (SILAR) method which is a simple and versatile for yielding good quality Bi 2Se 3 films of thickness upto ∼1.2 μm under a choice of deposition conditions is presented. The films were deposited onto glass and single crystalline wafer of Si(1 1 1). The structural, optical and electrical properties were studied. The thin films were smooth and homogeneous. The films annealed at 473 K in air for 1 h, did not show significant change in crystallinity and optical bandgap.
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