Abstract
The potential use of Ba (Zr,Ti) O 3 (BZT) thin films as a decoupling capacitor for a multi chip module (MCM) has been examined. The crystal structure of BZT thin films on Pt(100)/MgO(100) and MgO(100) deposited from Ba(Zr 0.2 Ti 0.8 ) O 3 powder targets had a perovskite structure and were strongly (100) oriented. The crystal structure of BZT thin films on Pt(111) was different from that of Pt(100)/MgO(100) and MgO(100) substrates. The degree of (100) orientation on Pt(111)/SiO 2 /Si increased with increasing deposition temperature. A maximum dielectric constant of 150 was obtained at 600°C deposition. The loss tangent, leakage current and temperature dependence of capacitance of these BZT thin films were very small.
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