Abstract
Arsenic trisulfide (As 2S 3) thin films were deposited by a relatively new and simple successive ionic layer adsorption and reaction (SILAR) method using As 2O 3 and Na 2S 2O 3 as arsenic and sulfide ion sources, respectively. The films were deposited on glass and silicon(111) wafer substrates. The concentration, pH, and temperature of anionic and cationic precursor solutions, immersion and rinsing times, and number of immersions have been optimized for obtaining good-quality As 2S 3 thin films. X-ray diffraction, optical absorption, and electrical resistivity techniques were used for characterization of the As 2S 3 thin films.
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