Abstract
A method for the preparation of amorphous Se 0.85Te 0.15/CdSe chalcogenide superlattices by means of vacuum evaporation under 1.33 × 10 -4 Pa is described. The small and large angle X-ray diffraction measurements, Raman spectroscopy, electron microscopy and diffraction are used for their characterization. The constituent layers are well defined with interfaces about two atomic layers thick. It is shown for the first time that the thermally evaporated CdSe layer converts into amorphous when two critera—for the layer to be sufficiently thin and to be enclosed between two amorphous Se 0.85Te 0.15 layers—are satisfied.
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