Abstract
Low-dielectric-constant amorphous fluorinated carbon (a-C:F) films were prepared using plasma-enhanced chemical vapor deposition (PECVD) from C4F6 (hexafluoro-1,3-butadiene) gas, which is expected to be a substitutional gas owing to its low global warming potential (GWP). Kinetic analysis revealed that the density of C4F6 in plasma has a proportional relation to film growth rate, which suggests that C4F6 is a main deposition precursor. From our previous study, this density affects the C–CF bond ratio in the film. In this study, we studied the effect of C–CF bond ratio on the thermal stability of the films by examining residual film thickness after vacuum annealing. A higher C–CF bond ratio resulted in a higher thermal stability, but the film became leaky after 300 °C annealing.
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