Abstract
Bi4Ti3O12 (BIT) thin films with TiO2 anataze buffer layer were deposited on the Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using Bi(CH3)3 and Ti(i-OC3H7)4 sources. When the substrate temperature was fixed at 500°C, the as-deposited BIT thin film exhibited highly a- and b-axes-oriented BIT single phase. The interface between the BIT thin film and the substrate was very smooth. The as-deposited BIT thin film consisted of small grain and exhibited a good P–E hysteresis loop. Subsequently, the remanent polarization (Pr) of the as-deposited BIT thin film with film thickness of 400 nm was 2Pr=44.4 µC/cm2.
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