Preparation and characteristics study of nano-porous silicon UV photodetector

Raid A Ismail,Alwan M Alwan,Ahmed S Ahmed

doi:10.1007/s13204-016-0544-9

Raid A Ismail, Alwan M Alwan + Show 1 more

Open Access

https://doi.org/10.1007/s13204-016-0544-9

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Journal: Applied nanoscience	Publication Date: Dec 26, 2016
Citations: 52	License type: open-access

Affiliation: University of Technology- Iraq

Abstract

In this study, influence of rapid thermal oxidation RTO and embedding of gold nanoparticles on the performance of porous silicon photodetector synthesised by anodization technique were investigated. Anodization technique was used to fabricate porous silicon photodetector at 10 mA/cm2 for 10 min. The structural, morphological, and photoluminescence properties of porous silicon and gold nanoparticles were investigated. Dark and illuminated current–voltage I–V characteristics, linearity, spectral responsivity, detectivity, and pulsed responsivity of photodetector were investigated before and after RTO and after incorporation of gold nanoparticles. The photosensitivity of nano-porous silicon photodetector at 365 nm was increased from 44 to 154 mA/W and to 200 mA/W at 10 V bias after RTO process and incorporating the gold nanoparticles into the silicon matrix, respectively.

Highlights

Ultraviolet detectors are of great importance due to their many industrial applications, such as semiconductor devices processing, missiles plume detection, space communication, nuclear reactor, and ozone monitoring (Min and Kang 2001; Monroy et al 2001, 2003)
In this study, influence of rapid thermal oxidation RTO and embedding of gold nanoparticles on the performance of porous silicon photodetector synthesised by anodization technique were investigated
Porous silicon photodetector was used for UV detection, it has many advantages over the other materials, such as high absorption coefficient for UV region, it does not require anti-reflective coating and low cost, and needs simple fabrication technology (Berger et al 1994; Ismail 2010)

Summary

Introduction

Ultraviolet detectors are of great importance due to their many industrial applications, such as semiconductor devices processing, missiles plume detection, space communication, nuclear reactor, and ozone monitoring (Min and Kang 2001; Monroy et al 2001, 2003). Abstract In this study, influence of rapid thermal oxidation RTO and embedding of gold nanoparticles on the performance of porous silicon photodetector synthesised by anodization technique were investigated.

Results

Conclusion