Abstract
Cu2ZnSnSe4 (CZTSe) thin films with the advantages of low cost, abundance in resources, and the suitable band-gap of 0.9~1.1 eV have been the potential materials for solar cells, though the Cu(In,Ga)Se2 thin films have received most of the attentions. In this study, CZTSe thin films were prepared by direct-current (D.C.) sputtering using three self-made CZTSe targets in different compositions. The sputtered films displayed a preferred orientation in (112) by the X-ray diffraction analysis. The films were also characterized by field-emission scanning electron microscopy and energy dispersion spectroscopy. The films had the band-gap of 0.8~1.08 eV analyzed by absorption spectroscopy. CZTSe films were p-type and had a low electrical conductivity of 10-3 ohm-cm and a high carrier concentration of 1020~1021 cm-2.
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