Abstract
This paper presents initial testing of the first batch of LGAD sensors fabricated by Teledyne e2v in collaboration with the University of Birmingham, University of Oxford, Rutherford Appleton Laboratory and the Open University. Wafers with different energy and dose of the gain layer implant have been characterised with IV, CV and gain measurements. The same set of measurements were made using PiN diodes fabricated on the same wafer as a reference. Results are in-line with expectations and with LGADs produced at more established vendors. Preliminary results suggests Te2v LGADs have a moderate gain in the order of 10 to 50 before irradiation at operational voltages well below breakdown, as required for optimal timing resolution.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.