Preliminary study on organic memory embedded metal nanoparticle stacking layers

Abstract

Summary form only given, as follows: Nonvolatile memory based on metal nanoparticles embedded in organic dielectric layers has been investigated as a candidate for organic memories. Here, we propose a novel memory composed of ordered metal nanoparticle layers between organic dielectric layers. The advantage of the memory is to control the storage of electric charges by changing the number of metal nanoparticle monolayers. The monolayer of metal nanoparticles formed at water surface by Langmuir trough and transferred onto the organic layers and/or substrates. The thickness of nanoparticle layers was controlled by the number of stacking. The memory device composed of ITO /organic layer / metal nano-particle layers / organic layer / Al. As a result, we observed the typical I-V hysteresis curve as a memory effect. The area of hysteresis curve increased with increasing the stacking numbers of nanoparticle layers. This indicates the stacking of metal nanoparticles controlled the amount of storage in organic memory device.