Preliminary single event effect distribution investigation on 28 nm SoC using heavy ion microbeam

Abstract

The SEE susceptibility on 28 nm Xilinx Zynq-7020 All Programmable SoC was investigated at heavy ion microbeam facilities in Institute of Modern Physics (IMP). The sensitive SEE spots distribution in entire PS area was obtained by running the on chip memory (OCM) test program. The extracted chip bottom modules layout information indicated that the SEE sensitive events occurred in the OCM area, central data processing area, and interfaces controlling buffer registers elements area, accounting for 19.6%, 32.6% and 47.8%, respectively. The results showed it was possible that the SEE events in other areas appeared more serious than in the target block located area. Meanwhile, the partial cross section was gotten in the test and it was (5.75 ± 0.85) × 10−5 cm2.