Abstract
The computational design of a high throughput chemical vapor deposition (CVD) reactor to deposit silicon films is here presented. The reactor is characterized by a multichannel hot wall structure, atmospheric operation, and an alternated feeding of reactants from the two reactor sides to ensure the maximum consumption of precursors while keeping an acceptable film thickness uniformity. Particular care was ensured in developing an inlet/exhaust design to uniformly distribute/exhaust the reactants and byproducts through the different channels of the reactor.
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