Abstract
Barium titanate (BaTiO3) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO3 thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm.
Highlights
Barium titanate (BaTiO3 or BTO) thin films have been extensively studied over the years because of the wide range of applications in thin-film capacitors [1], nonvolatile memories, electro-optical devices [2], and MEMS devices [3], owing to their interesting dielectric [4], ferroelectric [5], piezoelectric and electro-optical [6] properties
We demonstrate the growth of BaTiO3 thin films on silicon substrates by chemical solution deposition
X-ray diffraction analysis Figure 1 shows different X-ray diffractograms of BaTiO3 thin films deposited on bare silicon substrates and subjected to an annealing treatment at 600°C or 700°C
Summary
Barium titanate (BaTiO3 or BTO) thin films have been extensively studied over the years because of the wide range of applications in thin-film capacitors [1], nonvolatile memories, electro-optical devices [2], and MEMS devices [3], owing to their interesting dielectric [4], ferroelectric [5], piezoelectric and electro-optical [6] properties. A variety of methods have been demonstrated for the growth of BTO thin films. The epitaxial deposition of thin films on silicon substrates is a key technology for the development of small photonic and electronic devices, based on the current CMOS fabrication platform. The epitaxial growth of ferroelectric thin films on silicon substrates still remains a challenge.
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