Abstract
The process of sputtering by bombardment with gas cluster ions was investigated from the perspective of the kinetic energy per constituent atom (E atom ) of an incident cluster ion, which determines the threshold for the formation of craterlike defects by irradiation of an argon gas cluster ion beam (Ar-GCIB) onto a graphite surface. Furthermore, DNA molecules adsorbed on a graphite surface were preferentially sputtered by adjusting E atom of the Ar-GCIB down to this threshold, while the substrate graphite surface retained its carbon lattice structure without the formation of craterlike defects. These results indicate that a GCIB could be used as a primary ion beam for secondary ion mass spectrometry (SIMS), which would enable the preferential analysis of an adsorbed layer on a substrate without causing damage to the substrate.
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